advanced power p-channel enhancement mode electronics corp. power mosfet 100% r g & uis test bv dss -30v simple drive requirement r ds(on) 7m ultra low on-resistance i d 3 -15.5a rohs compliant & halogen-free hbm esd 2kv description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice pulsed drain current 1 -50 201702233 1 parameter total power dissipation operating junction temperature range storage temperature range AP3P7R0EM rating halogen-free product parameter drain-source voltage gate-source voltage drain current 3 , v gs @ 10v -30 + 25 -15.5 thermal data 2.5 -55 to 150 -55 to 150 drain current 3 , v gs @ 10v -12.4 a p3p7r0e series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s s s g d d d d g d s .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-14a - - 7 m v gs =-4.5v, i d =-7a - - 11 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -2 v g fs forward transconductance v ds =-5v, i d =-14a - 42 - s i dss drain-source leakage current v ds =-24v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 30 ua q g total gate charge i d =-7a - 33 52.8 nc q gs gate-source charge v ds =-15v - 10 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 10 - nc t d(on) turn-on delay time v ds =-15v - 38 - ns t r rise time i d =-1a - 58 - ns t d(off) turn-off delay time r g =3.3 - 600 - ns t f fall time v gs =-10v - 240 - ns c iss input capacitance v gs =0v - 4300 6880 pf c oss output capacitance v ds =-15v - 600 - pf c rss reverse transfer capacitance f=1.0mhz - 270 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-2.1a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-14a, v gs =0 v , - 30 - ns q rr reverse recovery charge di/dt=100a/s - 21 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10s ; 125 /w when mounted on min. copper pad. 2 AP3P7R0EM .
AP3P7R0EM fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 2.01e+09 fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 01234 -v ds , drain-to-source voltage (v) -i d , drain current (a) -10v -8.0v -7.0v -6.0v -5.0v v g = -4.0v t a =25 o c 0 10 20 30 40 50 01234 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c -10v -8.0v -7.0v -6.0v -5.0v v g = -4.0v 5 6 7 8 9 10 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-7a t a =25 o c 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -14a v g = -10v 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c i d = -250ua .
AP3P7R0EM fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance 2011082301 fig 11. transfer characteristics fig 12. drain current v.s. ambient temperature 4 0 2 4 6 8 0 102030405060 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-7a v ds = -15v 0 2000 4000 6000 8000 1 5 9 13 17 21 25 29 33 37 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse duty factor = t/t peak t j = p dm x r thja + t a r thja =125 o c/w 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(on) 0 4 8 12 16 20 25 50 75 100 125 150 t a , ambient temperature ( o c ) -i d , drain current (a) 0 20 40 60 80 100 0123456 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds =-5v t j = -55 o c .
AP3P7R0EM fig 13. normalized bv dss v.s. junction fig 14. total power dissipation temperature fig 15. typ. drain-source on state resistance 5 0 1 2 3 4 0 50 100 150 t a , ambient temperature( o c) p d , power dissipation(w) 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d = -1ma 0 10 20 30 40 50 0 20 40 60 80 100 120 -i d , drain current (a) r ds(on) (m ) t j =25 o c -4.5v v gs = -10v .
AP3P7R0EM marking information 6 date code (ywwsss) y last digit of the year ww week sss sequence part numbe r 3p7r0e ywwsss .
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